Mekanisme Hamburan Defek Statis Dan Vibrasi Termal Terhadap Mobilitas Elektron Pada Film Tipis GaN

*Dadi Rusdiana  -  Jurusan Pendidikan Fisika, FPMIPA UPI Bandung, Indonesia
Lilik Hasanah  -  Jurusan Pendidikan Fisika, FPMIPA UPI Bandung, Indonesia
Endi Suhendi  -  Jurusan Pendidikan Fisika, FPMIPA UPI Bandung, Indonesia
Received: 7 Mar 2012; Published: 19 Mar 2012.
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Section: Research Articles
Language: EN
Statistics: 200 204
Abstract

Electrons Mobility in GaN thin films has been determined for temperature variation using approach method to the relaxation time due to the influence of static defect scattering and thermal vibrations. The simulation results show that electron mobility is strongly influenced by environmental temperature, except for the scattering of neutral impuritas type that does not affect the value of the charge carrier mobility even though the external temperature was varied.

 

Keywords: Electrons Mobility, defect static, thermal vibration

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