Growth Mechanism and Characterization of  PbTe0.5Se0.5 Thin Films Used by Closed-Space Vapor Transport in a  Vertical Reactor

Yanuar Hamzah; Jimmy Copriady; Ariswan Ariswan

doi:10.14710/reaktor.19.1.11-17

DOI: https://doi.org/10.14710/reaktor.19.1.11-17

Growth Mechanism and Characterization of PbTe0.5Se0.5 Thin Films Used by Closed-Space Vapor Transport in a Vertical Reactor

Yanuar Hamzah

- Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Riau, Indonesia

*Jimmy Copriady

- Department of Chemical Education, FKIP Universitas Riau, Indonesia

Ariswan Ariswan - Department of Physics Education, Faculty of Mathematics and Natural Sciences,

Received: 30 Sep 2018; Published: 10 May 2019.

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Abstract

A simple method for growing thin film of semiconductor material PbTe₀_.₅Se₀_.₅₀ has been designed using the vapor transport (CSVT) method in a vertical reactor. The objectivity of this method is to study thin film growth formation due to chemical reactions during the deposition process in the reactor. In this study will describe some formations the vapor transport mechanism of PbTe₀_.₅Se₀_.₅₀ semiconductor material using iodine gas (I₂) to accelerate the etching reaction on the substrate surface. Next, we will describe how the mechanism of the reaction in the reactor zone for growing thin films on the substrate. The thin films were characterized by structural, morphology properties and its composition. The film structure is a cubic structure with the maximum diffraction intensity at peak (222). The surface morphology of the thin film has a microcubes shape with a grain size~10 to 20 mm.

Keywords: etching reaction; micro-cube; PbTe₀_.₅Se₀_.₅₀; close-spaced vapor transport

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Section: Research Article

Language : ID

In Volume 19 No. 1 March 2019

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