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Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD

*Horasdia Saragih  -  1 Kelompok Keahlian Fisika Material Elektronik, FMIPA, Institut Teknologi Bandung, Indonesia
Hasniah Hasniah  -  Kelompok Keahlian Fisika Material Elektronik, FMIPA, Institut Teknologi Bandung, Indonesia
Euis Sustini  -  Kelompok Keahlian Fisika Material Elektronik, FMIPA, Institut Teknologi Bandung, Indonesia
Sukirno Sukirno  -  Kelompok Keahlian Fisika Material Elektronik, FMIPA, Institut Teknologi Bandung, Indonesia

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Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175oC; (2) In(TMHD)3 powder starts to evaporate at 184oC; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300oC – 400oC. According to these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200oC; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300oC. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition, and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.

 

Keywords: In(TMHD)3 precursor, In­2O3, thin films, thermal properties, MOCVD.

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Last update: 2021-06-25 13:50:38

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Last update: 2021-06-25 13:50:38

No citation recorded.