Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD

Abstract

The In₂O₃ thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)₃ as a metal organic precurcor. Thermal properties of In(TMHD)₃ material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In₂O₃ deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)₃ powder is 175^oC; (2) In(TMHD)₃ powder starts to evaporate at 184^oC; (3) partial oxidation of In(TMHD)₃ in Ar/atmosfer accur at 260^oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300^oC – 400^oC. According to these results, we maintaned growth condition for deposition of In₂O₃: the temperature of In(TMHD)₃ bubbler (T_b) = 200^oC; the pressure of In(TMHD)₃ bubbler (P_b) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)₃ = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300^oC. In 120 minutes, the thickness of deposited In₂O₃ thin films, the rate of deposition, and the roughness of film surface are about 0.2 µm, 1.6x10^-3 µm/menit and 70 nm, respectively.

Keywords: In(TMHD)₃ precursor, In­₂O₃, thin films, thermal properties, MOCVD.