1Department of Physics, FMIPA, Mulawarman University, Samarinda, 75123, Indonesia
2Department of Physics, FMIPA, Syiah Kuala University, Banda Aceh, 23111, Indonesia
3Department of Physics, FSAD, Institut Teknologi Sepuluh Nopember, Surabaya, 60111, Indonesia
BibTex Citation Data :
@article{IJRED40193, author = {Dadan Hamdani and Soni Prayogi and Yoyok Cahyono and Gatut Yudoyono and Darminto Darminto}, title = {The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell}, journal = {International Journal of Renewable Energy Development}, volume = {11}, number = {1}, year = {2022}, keywords = {p-type; AFORS-HET; heterojunction; ITO; barrier height}, abstract = { In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% ( V OC = 1042 mV, J SC = 10.08 mA/cm 2 , FF = 83.85%) has been obtained for the optimum dopant values of N A = 1.0 x 10 19 cm -3 and N D = 1.0 x 10 19 cm -3 , respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values }, pages = {173--181} doi = {10.14710/ijred.2022.40193}, url = {https://ejournal.undip.ac.id/index.php/ijred/article/view/40193} }
Refworks Citation Data :
In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% (VOC = 1042 mV, JSC = 10.08 mA/cm2, FF = 83.85%) has been obtained for the optimum dopant values of NA = 1.0 x 1019 cm-3 and ND = 1.0 x 1019 cm-3, respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values
Article Metrics:
Last update:
The advantages of employing i-a-SiOX:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells
Electronic structure analysis of a-Si: H p-i1-i2-n solar cells using ellipsometry spectroscopy
The influences of the front work function and intrinsic bilayer (i1, i2) on p-i-n based amorphous silicon solar cell’s performances: A numerical study
An Easy-to-Use Magnetic Dynamometer for Teaching Newton’s Third Law
Electronic structure of P-type amorphous silicon nanowires
N-type diamane: An effective emitter layer in crystalline silicon heterojunction solar cell
Ultrathin Film Amorphous Silicon Solar Cell Performance using Rigorous Coupled Wave Analysis Method
Investigations on the Influence of Surface Textures on Optical Reflectance of Multi-crystalline Silicone (MC-Si) Crystal Surfaces-Simulations and Experiments
Simulation and fabrication of a-Si:H thin-film solar cells: a comparative study of simulation and experimental results
Last update: 2024-11-22 01:13:56
This journal provides immediate open access to its content on the principle that making research freely available to the public supports a greater global exchange of knowledge. Articles are freely available to both subscribers and the wider public with permitted reuse.
All articles published Open Access will be immediately and permanently free for everyone to read and download. We are continuously working with our author communities to select the best choice of license options: Creative Commons Attribution-ShareAlike (CC BY-SA). Authors and readers can copy and redistribute the material in any medium or format, as well as remix, transform, and build upon the material for any purpose, even commercially, but they must give appropriate credit (cite to the article or content), provide a link to the license, and indicate if changes were made. If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original.
International Journal of Renewable Energy Development (ISSN:2252-4940) published by CBIORE is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
