Chemistry Department, Faculty of Sciences and Mathematics, Diponegoro University, Indonesia
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@article{JKSA24564, author = {Aziz Amrullah and Gunawan Gunawan and Nor Basid Prasetya}, title = {The Effect of Cu Ohmic Contact on Photoelectrochemical Property of S-CuO Thin Film Photocathodes}, journal = {Jurnal Kimia Sains dan Aplikasi}, volume = {22}, number = {6}, year = {2019}, keywords = {Ohmic Contact; Cyclic Voltammetry; Doped Sulphur}, abstract = {The development of semiconductor materials as photocathodes that have excellent performance is significant for the photoelectrochemical reaction of hydrogen evolution. The thin film of sulfur-doped Copper (II) oxide (S-CuO) was successfully synthesized using the cyclic voltammetry method. Investigation of photoelectrochemical properties of S-CuO photocathodes, including current density, onset potential, applied photon to current efficiency (ABPE), and bandgap had been carried out. It was reported that the Cu ohmic contact affected the photoelectrochemical properties and the stability of the thin film. The presence of Cu ohmic contact can improve the performance of S-CuO thin film photocathodes. The S-CuO TU 20 mM thin film has the best response with a current density of -0.923 mA/cm 2 , an onset potential of 0.59 V, and ABPE of 0.21%. Stability occurred at pH 7 in 0.2M NaH 2 PO 4 . The optical analysis showed S-CuO TU 20 mM bandgap of 1.7 eV.}, issn = {2597-9914}, pages = {256--262} doi = {10.14710/jksa.22.6.256-262}, url = {https://ejournal.undip.ac.id/index.php/ksa/article/view/24564} }
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Preparation of thin layer CuO from Cu2O using the Spin Coating Method at Various Annealing Temperature and Number of Dripping for Photoelectrochemical Water Splitting
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