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The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

1Department of Physics, FMIPA, Mulawarman University, Samarinda, 75123, Indonesia

2Department of Physics, FMIPA, Syiah Kuala University, Banda Aceh, 23111, Indonesia

3Department of Physics, FSAD, Institut Teknologi Sepuluh Nopember, Surabaya, 60111, Indonesia

Received: 22 Jul 2021; Revised: 25 Sep 2021; Accepted: 31 Oct 2021; Available online: 10 Nov 2021; Published: 1 Feb 2022.
Editor(s): H. Hadiyanto
Open Access Copyright (c) 2022 The Authors. Published by Centre of Biomass and Renewable Energy (CBIORE)
Creative Commons License This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

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In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% (VOC = 1042 mV, JSC = 10.08 mA/cm2, FF = 83.85%) has been obtained for the optimum dopant values of NA = 1.0 x 1019 cm-3 and ND = 1.0 x 1019 cm-3, respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values

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Keywords: p-type; AFORS-HET; heterojunction; ITO; barrier height
Funding: BUDI-LPDP Departemen Keuangan RI

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