1Department of Physics, FMIPA, Mulawarman University, Samarinda, 75123, Indonesia
2Department of Physics, FMIPA, Syiah Kuala University, Banda Aceh, 23111, Indonesia
3Department of Physics, FSAD, Institut Teknologi Sepuluh Nopember, Surabaya, 60111, Indonesia
BibTex Citation Data :
@article{IJRED40193, author = {Dadan Hamdani and Soni Prayogi and Yoyok Cahyono and Gatut Yudoyono and Darminto Darminto}, title = {The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell}, journal = {International Journal of Renewable Energy Development}, volume = {11}, number = {1}, year = {2022}, keywords = {p-type; AFORS-HET; heterojunction; ITO; barrier height}, abstract = { In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% ( V OC = 1042 mV, J SC = 10.08 mA/cm 2 , FF = 83.85%) has been obtained for the optimum dopant values of N A = 1.0 x 10 19 cm -3 and N D = 1.0 x 10 19 cm -3 , respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values }, pages = {173--181} doi = {10.14710/ijred.2022.40193}, url = {https://ejournal.undip.ac.id/index.php/ijred/article/view/40193} }
Refworks Citation Data :
In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% (VOC = 1042 mV, JSC = 10.08 mA/cm2, FF = 83.85%) has been obtained for the optimum dopant values of NA = 1.0 x 1019 cm-3 and ND = 1.0 x 1019 cm-3, respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values
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