Department of Electrical Engineering, University of Tiaret, Algeria
BibTex Citation Data :
@article{IJRED38527, author = {Youcef Belhadji}, title = {Numerical Modeling of CuInxGa(1-x)Se2/WS2 Thin Solar Cell with an Enhanced PCE}, journal = {International Journal of Renewable Energy Development}, volume = {11}, number = {2}, year = {2022}, keywords = {WS2; CuInxGa(1-x)Se2; divalent defect; thin film; scaps-1d}, abstract = {Designing thin film solar cells with high and stable output performance under different operating points remains a large area of research. In the context of Chalcopyrite-based solar cells (CuIn x Ga (1-x) Se 2 ) where the buffer layer is CdS, great progress has been made but research is still underway to optimize their performance. Besides the environmental concerns and limiting factors of CdS material, the use or combination of new materials like ZnS, ZnSe and WS 2 as a buffer layer is solicited. Due to these attracted optical and crystallographic properties, Tungsten Disulfide: WS 2 is solicited during the last years. Through numerical simulation, we investigate in this work the dc parameters of CuIn x Ga (1-x) Se 2 /WS 2 solar cell with reduced buffer layer thickness of 30 nm. Considering the presence of neutral and divalent defects in the absorber layer, simulations are performed under the impact of temperature, concentration of charge carriers in WS 2 layer and light spectrum change. The divalent defects taken into account are: double donors / acceptors and amphoteric having a Gaussian distribution. For more calculation precision and in order to obtain the desired performance of the solar cell, the impact of series and shunt resistors is also considered. In comparison with results reported in previous works, carried out on the CuIn x Ga (1-x) Se 2 /WS 2 solar cell, a remarkable improvement in the performance of the solar cell is achieved. When temperature increase by 10K, the short circuit current and open circuit voltage are enhanced by ~0,05mA/cm 2 and ~0,0022 respectively. The optimal values of the solar cell parameters obtained in this study are: Jsc≈ 31.0683 (mA/cm 2 ), Voc=1.0173 (V), PCE = 26.72 % and FF=84.54%.}, pages = {393--401} doi = {10.14710/ijred.2022.38527}, url = {https://ejournal.undip.ac.id/index.php/ijred/article/view/38527} }
Refworks Citation Data :
Article Metrics:
Last update:
Numerical investigation of lead free Cs2TiBr6 based perovskite solar cell with optimal selection of electron and hole transport layer through SCAPS-1D simulation
Numerical modelling and performance investigation of inorganic Copper-Tin-Sulfide (CTS) based perovskite solar cell with SCAPS-1D
Ultrathin Film Amorphous Silicon Solar Cell Performance using Rigorous Coupled Wave Analysis Method
Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation
Last update: 2024-12-20 20:32:45
This journal provides immediate open access to its content on the principle that making research freely available to the public supports a greater global exchange of knowledge. Articles are freely available to both subscribers and the wider public with permitted reuse.
All articles published Open Access will be immediately and permanently free for everyone to read and download. We are continuously working with our author communities to select the best choice of license options: Creative Commons Attribution-ShareAlike (CC BY-SA). Authors and readers can copy and redistribute the material in any medium or format, as well as remix, transform, and build upon the material for any purpose, even commercially, but they must give appropriate credit (cite to the article or content), provide a link to the license, and indicate if changes were made. If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original.
International Journal of Renewable Energy Development (ISSN:2252-4940) published by CBIORE is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.